Electron beam lithography (EBL) system
EBL system is used for fabrication of magnetic nano-devices. Resist is exposed by electron beam with a nano-sized spot.
Specifications
JBX-6300FS made by JEOL
Acceleration voltage : 50 kV / 100 kV
Emitter : ZrO/W
Beam spot : 2 - 10 nm
Sample size : 10 mmsq., 15mmsq., 20 mmsq., 2/3/4 wafer，3/4 inch mask