ECR plasma etcher with SIMS end point detector
Magnetic thin films are etched by ion beam extracted from ECR plasma source. The surface during the etching is monitored by secondary ion mass spectroscopy (SIMS).
Specifications
[Process chamber]
Laboratory made
Base pressure : 1×10-5 Pa
Sample stage : X，Z，tilt，in-plane rotation
[ECR plasma source]
RGB-114L made by IRIE Koken
Microwave（2.45 GHz）パワー : 100 W
Acceleration voltage : 0-600 V
Process gas : Ar, O2
Beam size : 30 mm diameter
[Secondary ion mass spectroscopy, SIMS]
EDP400 made by PFEIFFER
Mass range : 1-512 amu
Differential pumping system